N-channel MOSFET, 55 V, 110 A, 8 mΩ
| Vds | 55 V V |
| Id | 110 A A |
| Rds(on) | 8 mΩ @ 10 V |
N-channel logic-level MOSFET, 55 V, 47 A
| Vds | 55 V |
| Id | 47 A |
| Rds(on) | 22 mΩ @ 10 V |
Rectifier diode, 1000 V, 1 A
| Vrrm | 1000 V |
| If | 1 A |
| Vf | 1.1 V |
N-channel MOSFET, 100 V, 33 A
| Vds | 100 V |
| Id | 33 A |
| Rds(on) | 44 mΩ @ 10 V |
N-channel MOSFET, 55 V, 49 A
| Vds | 55 V |
| Id | 49 A |
| Rds(on) | 17.5 mΩ @ 10 V |
Precision timer IC
| Supply | 4.5–16 V |
| Output | 200 mA |
| Frequency | up to 100 kHz |
Bluetooth Low Energy module (CC2541), UART
| Supply | 3.3–6 V |
| Radio | BLE 4.0 |
| Interface | UART |
Step-down DC-DC module, 1.25–35 V, up to 3 A
| Output | 1.25–35 V adj. |
| Current | 3 A peak, 2 A continuous |
ESP8266 Wi-Fi module, 1 MB flash, AT commands
| Supply | 3.0–3.6 V |
| Radio | Wi-Fi 2.4 GHz |
| Flash | 1 MB |
LTE Cat-4 module for Europe, with GNSS
| Supply | 3.4–4.2 V |
| Radio | LTE Cat-4, 3G, 2G, GNSS |
| Bands | LTE B1/B3/B5/B7/B8/B20/B38/B40/B41, WCDMA B1/B5/B8, GSM 900/1800 |
