N-channel logic-level MOSFET, 55 V, 47 A
| Vds | 55 V V |
| Id | 47 A A |
| Rds(on) | 22 mΩ @ 10 V |
Rectifier diode, 1000 V, 1 A
| Vrrm | 1000 V |
| If | 1 A |
| Vf | 1.1 V |
N-channel MOSFET, 100 V, 33 A
| Vds | 100 V |
| Id | 33 A |
| Rds(on) | 44 mΩ @ 10 V |
N-channel MOSFET, 55 V, 49 A
| Vds | 55 V |
| Id | 49 A |
| Rds(on) | 17.5 mΩ @ 10 V |
N-channel MOSFET, 55 V, 110 A, 8 mΩ
| Vds | 55 V |
| Id | 110 A |
| Rds(on) | 8 mΩ @ 10 V |
Laser time-of-flight distance sensor, up to 2 m
| Supply | 2.6–5.5 V |
| Interface | I²C |
| Range | 30–2000 mm |
2.4 GHz radio module, up to 2 Mbps, SPI
| Supply | 1.9–3.6 V |
| Radio | 2.4 GHz ISM, 250 kbps–2 Mbps |
| Bands | 2.4 GHz |
Ultrasonic distance sensor, 2–400 cm
| Supply | 5 V |
| Interface | Trigger / echo |
| Range | 2–400 cm |
ESP32-C3 RISC-V development board, Wi-Fi + BLE 5
| Radio | Wi-Fi 2.4 GHz, BLE 5 |
| Flash | 4 MB |
| MCU | ESP32-C3, RISC-V, 160 MHz |
Digital ambient light sensor, 1–65535 lx
| Supply | 3–5 V |
| Interface | I²C |
| Range | 1–65535 lx |
